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 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1270
DESCRIPTION With TO-220Fa package Low collector saturation voltage Large collector current IC Complement to type 2SB945 APPLICATIONS For power switching applications
PINNING PIN 1 2 3 DESCRIPTION Base Collector Fig.1 simplified outline (TO-220Fa) and symbol Emitter
ABSOLUTE MAXIMUM RATINGS AT Ta=25ae
SYMBOL VCBO VCEO VEBO IC ICM

PARAMETER
CHA IN
Collector-base voltage
Collector-emitter voltage
E SEM NG
Open emitter
OND IC
CONDITIONS
TOR UC
VALUE 130 80 7 5 10
UNIT V V V A A
Open base Open collector
Emitter-base voltage Collector current (DC)
Collector current-peak TC=25ae
40 W 2 150 -55~150 ae ae
PC
Collector power dissipation Ta=25ae
Tj Tstg
Junction temperature Storage temperature
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=10mA , IB=0 IC=4A; IB=0.2A IC=4A ;IB=0.2A VCB=100V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=2V IC=2A ; VCE=2V IC=0.5A;VCE=10V;f=10MHz 45 60 30 MIN 80
2SD1270
SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT
TYP.
MAX
UNIT V
0.5 1.5 10 50 |I |I
V V A A
260 MHz
Switching times ton ts tf
Fall time
Turn-on time Storage time

hFE-2 Classifications R 60-120 Q 90-180 P 130-260
INC
E SEM ANG H
IC=2A ;IB1=0.2A ;IB2=-0.2A VCC=50V
OND IC
TOR UC
0.5 1.5 0.15
|I |I |I
s s s
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1270

CHA IN
E SEM NG
OND IC
TOR UC
Fig.2 Outline dimensions (unindicated tolerance:A
0.15 mm)
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1270

CHA IN
E SEM NG
OND IC
TOR UC
4


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